Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er
We demonstrate sharp room-temperature electroluminescence at 1.54 µm due to intra-4f transitions of Er3+ in semi-insulating polycrystalline silicon (SIPOS) implanted with Er and annealed for implant damage recovery. Our measurements refer to SIPOS containing 30 at.% O, doped with Er to concentrations of about 1 at.% and annealed at a temperature in the 400-1100 ³C range. The luminescence has been excited either by optically pumping with an Ar laser or by biasing suitable metal-SIPOS-p+ silicon devices.
|Journal||Nucl. Instrum. Methods Phys. Res. B|
Lombardo, S, Campisano, S.U, van den Hoven, G.N, & Polman, A. (1995). Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er. Nucl. Instrum. Methods Phys. Res. B, 96, 378–381.