Origin of the 1.54 µm luminescence of erbium-implanted porous silicon
Photoluminescence of erbium-implanted porous silicon is investigated. Room temperature 1.54 µm Er3+ luminescence is observed after annealing. The luminescence spectrum, annealing characteristics, temperature quenching, and the luminescence lifetime suggest that the Er3+ luminescence is mediated by photocarriers in the amorphous silicon matrix in porous silicon, and not related to the presence of the crystal nanograins.
|Journal||Appl. Phys. Lett.|
Shin, J.H, van den Hoven, G.N, & Polman, A. (1995). Origin of the 1.54 µm luminescence of erbium-implanted porous silicon. Appl. Phys. Lett., 66, 2379–2381.