On the nanostructure of pure amorphous silicon
Appl. Phys. Lett. , Volume 67 p. 226- 228
New features of the nanoscale structure of amorphous (a)-Si produced by ion-implantation-induced amorphization of crystalline (c)-Si have been determined by the technique of small-angle x-ray scattering (SAXS). Si ion energies up to 17 MeV were used to generate a thick amorphous layer (8 µm) on a c-Si wafer to enable the SAXS measurements. As-implanted and thermally annealed (up to 540 ³C) a-Si were studied. No nanovoids were detected within a sensitivity of 0.1 vol %, but the atomic-scale structure produced a measurable diffuse scattering signal that decreased with increasing anneal temperatures. These measurements show that the known density deficit of 1.8% in a-Si relative to c-Si cannot be due to voids and that a-Si is homogeneous on nm length scale.
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Williamson, D. L, Roorda, S, Chicoine, M, Tabti, R, Stolk, P. A, Acco, S, & Saris, F.W. (1995). On the nanostructure of pure amorphous silicon. Appl. Phys. Lett., 67, 226–228.