Synthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model to generate calculated photoluminescence spectra, which were compared with experimental spectra.

Additional Metadata
Publisher Materials Research Society
Editor R.W. Collins , C.C. Tsai , M. Hirose , F. Koch , L. Brus
Citation
Yang, C.M, Shcheglov, K.V, Brongersma, M.L, Polman, A, & Atwater, H.A. (1995). Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matrices. In R.W Collins, C.C Tsai, M Hirose, F Koch, & L Brus (Eds.), Microcrystalline and Nanocrystalline Semiconductors (pp. 181–186). Materials Research Society.