Synthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model to generate calculated photoluminescence spectra, which were compared with experimental spectra.

Materials Research Society
R.W. Collins , C.C. Tsai , M. Hirose , F. Koch , L. Brus
Photonic Materials

Yang, C. M., Shcheglov, K. V., Brongersma, M., Polman, A., & Atwater, H. (1995). Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matrices. In R. W. Collins, C. C. Tsai, M. Hirose, F. Koch, & L. Brus (Eds.), Microcrystalline and Nanocrystalline Semiconductors (pp. 181–186).