The use of hydrogen passivation of the silicon layers in Si/W soft X-ray reflective multilayer mirrors is investigated. Standard passivation, corresponding to Si:H/W structures, led to reduced growth properties of the W layers. The additional use of atomically thin Si adhesion layers, corresponding to Si:H/Si/W, led to improved growth and increased soft X-ray reflectivity. The effects taking place at the interfaces are analysed by bright field planar TEM and in situ X-ray reflectivity, and are described in terms of interface and surface energies, with quantitatively analysis of intermixing, materials density, and geometrical optical effects.

Additional Metadata
Persistent URL dx.doi.org/10.1016/j.susc.2006.01.046
Journal Surf. Sci.
Citation
Kessels, M. J. H, Verhoeven, J, Tichelaar, F. D, & Bijkerk, F. (2006). Si adhesion interlayer effects in hydrogen passivated Si/W soft X-ray multilayer mirrors. Surf. Sci., 600, 1405–1408. doi:10.1016/j.susc.2006.01.046