1995
Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111)
Publication
Publication
Phys. Rev. B , Volume 52 p. 17443- 17448
We have investigated the effect of In on the homoepitaxial growth of Cu(111) by means of surface x-ray diffraction. At the temperature range investigated (125-300 K), the growth on clean Cu occurs in a three-dimensional mode with the creation of twin crystallites over a small fraction of the total surface area. When the surface is precovered with a submonolayer amount of In, layer-by-layer growth is induced and the formation of twin crystallites is suppressed.
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| Phys. Rev. B | |
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van der Vegt, H. A., Alvarez, J., Torrelles, X., Ferrer, S., & Vlieg, E. (1995). Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111). Phys. Rev. B, 52, 17443–17448. |
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