We have investigated the effect of In on the homoepitaxial growth of Cu(111) by means of surface x-ray diffraction. At the temperature range investigated (125-300 K), the growth on clean Cu occurs in a three-dimensional mode with the creation of twin crystallites over a small fraction of the total surface area. When the surface is precovered with a submonolayer amount of In, layer-by-layer growth is induced and the formation of twin crystallites is suppressed.

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Journal Phys. Rev. B
Citation
van der Vegt, H.A, Alvarez, J, Torrelles, X, Ferrer, S, & Vlieg, E. (1995). Indium-induced layer-by-layer growth and suppression of twin formation in the homoepitaxial growth of Cu(111). Phys. Rev. B, 52, 17443–17448.