Luminescence quenching in erbium-doped hydrogenated amorphous silicon
Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation Room-temperature photoluminescence at 1.54 mm, due to an intra-4ƒ transition in Er4+, is observed after thermal annealing at 300-400°C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (I at.%) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.
|Journal||Appl. Phys. Lett.|
Shin, J.H, Serna, R, van den Hoven, G.N, Polman, A, van Sark, W.G.J.H.M, & Vredenberg, A.J. (1996). Luminescence quenching in erbium-doped hydrogenated amorphous silicon. Appl. Phys. Lett., 68, 997–999.