Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation Room-temperature photoluminescence at 1.54 mm, due to an intra-4ƒ transition in Er4+, is observed after thermal annealing at 300-400°C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (I at.%) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased.

Appl. Phys. Lett.
Photonic Materials

Shin, J. H., Serna, R., van den Hoven, G. N., Polman, A., van Sark, W. G. J. H. M., & Vredenberg, A. J. (1996). Luminescence quenching in erbium-doped hydrogenated amorphous silicon. Appl. Phys. Lett., 68, 997–999.