Suppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si1.15C complexes. These complexes also deteriorate the electrical properties of the implanted layer. They dissolve at annealing temperatures higher than 900 °C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed.

J. Appl. Phys.

Cacciato, A., Klappe, J. G. E., Cowern, N. E. B., Vandervorst, W., Bir, L. P., Custer, J. S., & Saris, F. W. (1996). Dislocation formation and B transient diffusion in C coimplanted Si. J. Appl. Phys., 79, 2314–2325.