Suppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si1.15C complexes. These complexes also deteriorate the electrical properties of the implanted layer. They dissolve at annealing temperatures higher than 900 °C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed.

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Journal J. Appl. Phys.
Citation
Cacciato, A, Klappe, J. G. E, Cowern, N. E. B, Vandervorst, W, Bir, L. P, Custer, J. S, & Saris, F.W. (1996). Dislocation formation and B transient diffusion in C coimplanted Si. J. Appl. Phys., 79, 2314–2325.