Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is 1.15 for C and 1 for B, consistent with a volume compensation mechanism.

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Journal Appl. Phys. Lett.
Cowern, N. E. B, Cacciato, A, Custer, J. S, Saris, F.W, & Vandervorst, W. (1996). Role of C and B clusters in transient diffusion of B in silicon. Appl. Phys. Lett., 68, 1150–1152.