Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is 1.15 for C and 1 for B, consistent with a volume compensation mechanism.

Appl. Phys. Lett.

Cowern, N. E. B., Cacciato, A., Custer, J. S., Saris, F. W., & Vandervorst, W. (1996). Role of C and B clusters in transient diffusion of B in silicon. Appl. Phys. Lett., 68, 1150–1152.