A 4 cm long Er-doped Al203spiral waveguide amplifier was fabricated on a Si substrate, and integrated with wavelength division multiplexers within a total area of 15 mm2. When pumped with 9 mW 1.48 µm light from a laser diode, the amplifier shows 2.3 dB net optical gain at 1.53 µm. The gain threshold was 3 mW. The amplifier was doped with Er by ion implantation to a concentration of 2.7X 1020 cm-3. The data agree well with calculations based on a model which includes the effects of cooperative upconversion and excited state absorption. For an optimized amplifier, net optical gain of 20 dB is predicted.

Appl. Phys. Lett.
Photonic Materials

van den Hoven, G. N., Koper, R. J. I. M., Polman, A., van Dam, C., van Uffelen, J. W. M., & Smit, M. K. (1996). Net optical gain at 1.53 µm in Er-doped Al2O3 waveguides on silicon. Appl. Phys. Lett., 68, 1886–1888.