Erbium-implanted silica microsphere laser
Nucl. Instrum. Methods Phys. Res. B , Volume 242 p. 182- 185
Spherical silica optical microresonators were doped with erbium ions by ion implantation at energies of 925 keV and 2.05 MeV using a rotating stage. After thermal annealing at 800 Â°C, light was coupled into the microsphere using a tapered optical fiber. An optical quality factor as high as 1.9x107 was observed at ? = 1450 nm, corresponding to a modal loss of only 0.01 dB/cm. When pumped at 1450 nm, multi-mode lasing around 1570 nm is observed at a threshold between 150 and 250 µW depending on the overlap between mode and Er distribution. This work demonstrates the compatibility of ion implantation and microresonator technology.
|Nucl. Instrum. Methods Phys. Res. B|
Kalkman, J, Polman, A, Kippenberg, T.J, Vahala, K.J, & Brongersma, M.L. (2006). Erbium-implanted silica microsphere laser. Nucl. Instrum. Methods Phys. Res. B, 242, 182–185. doi:10.1016/j.nimb.2005.08.160