Si nanocrystals (diameter 2 - 5 nm) were formed by 35 keV Si+ implantation at a fluence of 6x1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100

Pittsburgh: MRS
A. Polman (Albert) , S. Coffa , R. Soref
Photonic Materials

Brongersma, M., Min, K. S., Boer, E., Tambo, T., Polman, A., & Atwater, H. (1998). Tailoring the optical properties of Si nanocrystals in SiO2: Materials issues and nanocrystal laser perspectives. In A. Polman, S. Coffa, & R. Soref (Eds.), Materials and Devices for Silicon-Based Optoelectronics : Symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A. (pp. 213–218).