Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing
Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV CHx+ ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 °C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 °C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM.
|Reviewer||J. J. Boon|
|Journal||Nucl. Instrum. Methods Phys. Res. B|
Dobrovolskiy, S, Yakshin, A. E, Tichelaar, F. D, Verhoeven, J, Louis, E, & Bijkerk, F. (2010). Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing. Nucl. Instrum. Methods Phys. Res. B, 268(6), 560–567. doi:10.1016/j.nimb.2009.12.022