We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers.

Additional Metadata
Publisher IOP
Persistent URL dx.doi.org/10.1088/0268-1242/28/12/124003
Journal Semicond. Sci. Technol.
Citation
Schaafsma, M.C, & Gómez Rivas, J. (2013). Semiconductor plasmonic crystals : active control of THz extinction. Semicond. Sci. Technol., 28(12, Article number: 124003), 1–7. doi:10.1088/0268-1242/28/12/124003